Reviewed by Lexie CornerDec 2 2024
An international team of researchers has made a ground-breaking discovery that opens the door to developments in neuromorphic computing and ultrahigh-density data storage: room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires. This discovery was published in Nature Communications.
Polar structure and ferroelectric polarization. Image Credit: Jinlei Zhang, Jiayong Zhang, Yaping Qi, et al.
This study provides the first experimental confirmation of ferroelectricity in Te nanowires, a single-element material that was previously solely anticipated in theoretical models.
Ferroelectric materials are substances that can store electrical charge and keep it even when the power is turned off, and their charge can be switched by applying an external electric field - a characteristic essential for non-volatile memory applications.
Yong P. Chen, Study Co-Corresponding Author and Principal Investigator, Tohoku University
Yong P. Chen is also a Professor at Purdue and Aarhus Universities.
Ferroelectricity is commonly found in compounds, but single-element materials like tellurium (Te) rarely exhibit this property due to their symmetric atomic structures.
However, Chen and his team demonstrated that Te nanowires exhibit strong ferroelectric characteristics at room temperature due to the unique atomic displacement in their one-dimensional chain structure. They discovered this using piezoresponse force microscopy (PFM) and high-resolution scanning transmission electron microscopy.
Building on this finding, the group created a novel device called a self-gated ferroelectric field-effect transistor (SF-FET), which combines semiconducting and ferroelectric characteristics into one unit.
The SF-FET has a remarkable storage density of more than 1.9 terabytes per square centimeter, fast switching speeds of less than 20 nanoseconds, and outstanding data retention.
Our breakthrough opens up new opportunities for next-generation memory devices, where Te nanowires' high mobility and unique electronic properties could help simplify device architectures. Our SF-FET device could also play a crucial role in future artificial intelligence systems, enabling neuromorphic computing that mimics human brain function. Additionally, the findings can help lead to lower power consumption in electronic devices, addressing the need for sustainable technology.
Yaping Qi, Study Co-First Author and Assistant Professor, Advanced Institute for Materials Research, Tohoku University
The team at AIMR, including Qi and Chen, is collaborating with Professor Hao Li's group to explore new 2D ferroelectric materials using artificial intelligence (AI) techniques. This research may lead to the discovery of additional materials with promising ferroelectric properties or potential applications beyond memory storage, such as neuromorphic computing.
Journal Reference:
Zhang, J., et al. (2024) Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires. Nature Communications. doi.org/10.1038/s41467-024-52062-6.