China Carbon Graphite Group, Inc. ("China Carbon" or the "Company"), the largest wholesale supplier of fine-grain and high-purity graphite in China and one of the nation's top manufacturers of carbon and graphite products, is pleased to announce it has been working on a graphene technology research program with the top Chinese institute in that field.
The amazing electrical, optical and strength properties of graphene, a single-atom-thick layer of carbon, have been extensively researched over the last decade. Recently, the material has been studied as a coating that might confer electrical conductivity while maintaining other properties of the underlying material.
Alexander A. Balandin, a professor of electrical engineering in the Bourns College of Engineering and founding chair of materials science and engineering at the University of California, Riverside has been named an IEEE Fellow for 2013. IEEE is the world's leading professional organization for advancing technology for humanity.
Now, Helmholtz Centre Berlin's Dr. Andrei Varykhalov, Prof. Dr. Oliver Rader and his team of physicists has taken the first step towards building graphene-based components, in collaboration with physicists from St. Petersburg (Russia), Jülich (Germany) and Harvard (USA). According to their report on 27. November 2012 in Nature Communications (DOI: 10.1038/ncomms2227), they successfully managed to increase the graphene conduction electrons' spin-orbit coupling by a factor of 10,000 – enough to allow them to construct a switch that can be controlled via small electric fields.
A seamless graphene/nanotube hybrid created at Rice University may be the best electrode interface material possible for many energy storage and electronics applications.
Grafoid Inc., a privately owned graphene development company announced today the signing of the three-year research and development agreement with Hydro-Québec's Research Institute for the development of next generation rechargeable batteries using graphene with lithium iron phosphate materials.
By fabricating graphene structures atop nanometer-scale “steps” etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics. Use of nanoscale topography to control the properties of graphene could facilitate fabrication of transistors and other devices, potentially opening the door for developing all-carbon integrated circuits.
By fabricating graphene structures atop nanometer-scale "steps" etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics.
Researchers at the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST), in joint work with a NIMS team headed by Dr. Kazuhito Tsukagoshi, a MANA Principal Investigator at the NIMS International Center for Materials Nanoarchitectonics, developed a novel technique for controlling the electrical conductivity of graphene.
mPhase Technologies, Inc. (OTCBB: XDSL) announced today that Pan European Networks has circulated a newsletter featuring contributions from mPhase Technologies and Professor Kostya Novoselov, a Nobel Prize winning researcher. Professor Novoselov was jointly awarded, with Andre Geim, The Nobel Prize in Physics 2010 for "groundbreaking experiments regarding the two-dimensional material graphene."
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