The Advanced Materials group of Materion Corporation has been honored with the “2014 Annual Perfect Quality Award” by ISMF, the Malaysian manufacturing plant of ON Semiconductor (NASDAQ: ONNN). The award recognizes Materion for achieving a “perfect” rating for quality control and for the highest performance among eight materials suppliers.
The eBeam Initiative, a forum dedicated to the education and promotion of new semiconductor manufacturing approaches based on electron beam (eBeam) technologies, today announced that its top theme for 2015 will be the reactivation of the density benefits of Moore's Law through eBeam technology.
ICN2 Oxide Nanoelectronics Group obtains conductivity values for stroncium iridate 250 times higher than in normal conditions, just pressing with nanometric needles. The results, published in Nanoscale, where obtained thanks to the use of the atomic force microscope (AFM) showing that the material could become a good candidate for future applications in sensors and electronics.
Samsung Electronics Co., Ltd., a world leader in advanced semiconductor solutions, announced that it has begun mass production of industry’s first mobile application processor using the advanced 14-nanometer (nm) FinFET process technology.
A new mobile device that allows bladder and kidney cancer to be detected at an early stage. This is being worked on by Wilfred van der Wiel, professor of nanoelectronics at the University of Twente MESA+ research institute. Thanks to this method, it is possible to read from DNA cells whether their carrier has bladder or kidney cancer.
Thin Film Electronics ASA (“Thinfilm”), a leader in the development and commercialization of printed electronics and smart systems, today announced that it has joined the GSMA, the organization that represents the interests of mobile operators worldwide and hosts the annual Mobile World Congress conference.
Overheating is a major problem for the microprocessors that run our smartphones and computers. But a team of UCLA and USC scientists have made a breakthrough that should enable engineers to design microprocessors that minimize that problem: They have developed a thermal imaging technique that can "see" how the temperature changes from point to point inside the smallest electronic circuits.
Anyone who has ever toasted the top of their legs with their laptop or broiled their ear on a cell phone knows that microelectronic devices can give off a lot of heat. These devices contain a multitude of transistors, and although each one produces very little heat individually, their combined thermal output is significant and can damage the device.
Scientists have long been puzzled by the spin-field-effect transistor (spin FET) and great efforts have been put into attempt of solving the long challenged problems. Now a Tainan-based National Cheng Kung University (NCKU) research team has successfully developed the first spin FET.
A University of Texas at Arlington researcher will use an Army Research Office grant to purchase a micro-optics assembly and characterization system that will usher in more intricate nanoscale-related research and manufacturing in the College of Engineering.
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