Samsung Electronics, a pioneer in sophisticated memory technology, has commenced the production of its novel 20-nm class micro Secure Digital (microSD) cards.
New Samsung 20-nm class microSD card
The 32 GB high-performance cards with superior data transfer speeds can be used in fourth-generation (4G) smartphones.
The microSD cards feature a class 10 speed rating that allows smooth data transmission and storage of full HD videos, one among the popular features of 4G smartphones. Their reading speed is 24 MB/s and writing speed is 12 MB/s, which is two times the optimum writing speed of a 32GB microSD card with class 4 rating.
The 20-nm class microSD card comprises a proprietary 3-bit NAND controller and 32Gb 3-bit NAND flash memory chips to provide superior performance. Samsung Electronics is introducing the new card following the successful release of its 30-nm class, 32 Gb 3-bit NAND-based microSD cards in February 2010. By using the process technology of the advanced 20-nm class, the chip productivity is increased more than 30%.
Samsung intends to continue its efforts to launch new NAND-based mobile memory solutions. The company expects to start the volume production of its 20-nm class 64 Gb 3-bit NAND using sophisticated toggle NAND architecture in the beginning of 2012.
According to Samsung Electronics’ Executive Vice President of Memory Sales & Marketing, Wanhoon Hong, the high-class-rated memory cards fulfill the growing demands for high-performance mobile applications in highly sophisticated smartphones, including 4G editions.