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Virage Logic Expands Collaboration with SMIC for 40nm LL Process Technology

Virage Logic Corporation (Nasdaq: VIRL), the semiconductor industry's trusted IP partner, and Semiconductor Manufacturing International Corporation (SMIC; NYSE: SMI and SEHK: 0981.HK), the leading foundry in China, t...

23 Jul 2010

Samsung to Develop Advanced NAND Flash Memory Along with Toshiba

Samsung Electronics Co., Ltd. and Toshiba Corporation today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today – a double data rate (DDR) NAND flash memory with a 400 megabit-per-second (Mbps) interface, toggle DDR 2.0 specification.

From Samsung Electronics 22 Jul 2010

Economic Solution to Reduce Surface Tension During Nanowire Production

Surface tension isn't a very powerful force, but it matters for small things — water bugs, paint, and, it turns out, nanowires.

22 Jul 2010

Simple Surface-Based Chemical Method to Grow Graphene Nanoribbons

In the recent issue of Nature, scientists from Empa and the Max Planck Institute for Polymer Research report how they have managed for the first time to grow graphene ribbons that are just a few nanometres wide using a simple surface-based chemical method.

22 Jul 2010

Northeastern University Receives $2 Million Grant to Help Commercialize Nanotechnology

Northeastern University's Nanoscale Science and Engineering Center for High-rate Nanomanufacturing (CHN) has received a $2 million grant to help commercialize nanotechnology and put smaller, more energy efficient electronic devices in the hands of consumers more quickly.

21 Jul 2010

Researchers Build Transistor Based on Carbon Nanotubes

ETH Zurich researchers have built a transistor whose crucial element is a carbon nano-tube, suspended between two contacts, with outstanding electronic properties. A novel fabrication approach allowed the scientists to construct a transistor with no gate hysteresis.

21 Jul 2010

Expanding Memory Capacity of Future Computers Using Nanotechnology

Scientists from the Hebrew University of Jerusalem have succeeded in showing how it is possible to greatly expand the memory capacity of future computers through the use of memory units based on silica nanoparticles combined with protein molecules obtained from the poplar tree.

21 Jul 2010

Veeco Ships Multiple TurboDisc K-Series GaN MOCVD Systems to Invenlux Corporation

Veeco Instruments Inc. (Nasdaq: VECO) announced today that it shipped multiple TurboDisc(R) K-Series(TM) gallium nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) systems to Invenlux Corporation, a U.S.-based manufacturer of light-emitting diodes (LEDs) to ramp capacity at its factory in Haiyan City, China.

From Veeco 21 Jul 2010

Samsung Starts Mass Production of New 30nm-Class Green DDR3 Chips

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first two-gigabit (Gb) Green DDR3 using 30 nanometer (nm) class process technology.

From Samsung Electronics 21 Jul 2010

Significant Breakthrough to Improve Quality of Future Semiconductors

Semiconductor Research Corporation (SRC), the world's leading university-research consortium for semiconductors and related technologies, the National Science Foundation (NSF) and researchers from the University of Connecticut (UConn) and Duke University have found a new way to significantly improve the screening of small delay defects (SDDs) commonly found in semiconductors.

21 Jul 2010