Nanoelectronics News

RSS

Researcher for First Time Made Graphene Visible on Gallium Arsenide

PTB has for the first time made graphene visible on gallium arsenide - A successful combination of two unique electronic materials.

16 Sep 2009

MIT Team Finds Way to Combine Materials for Semiconductor Manufacture

For decades, researchers have been trying to combine semiconductor materials that have different and potentially complementary characteristics into a single microchip. Now, an MIT team has finally succeeded in this effort, an advance that could point to a way of overcoming fundamental barriers of size and speed facing today's silicon chips.

15 Sep 2009

Nanoscale Friction and Manipulation of Carbon Nanotubes

Nanotubes and nanowires are promising building blocks for future integrated nanoelectronic and photonic circuits, nanosensors, interconnects and electro-mechanical nanodevices. But some fundamental issues remain to be resolved - among them, how to position and manipulate the tiny tubes.

15 Sep 2009

AIXTRON Receives Order for MOCVD tool from Nanjing University

AIXTRON AG announced today an order for a new MOCVD tool from Nanjing University's Institute of Optoelectronics (IOE) at Yangzhou. The order is a single AIX 2400G3 HT MOCVD system for development of ultra-high-brightness (UHB) InGaN/GaN-based LEDs and has been delivered in the first half of 2009.

From AIXTRON SE 15 Sep 2009

Size isn't the Only Thing that Matters for Data Storage

Molecules of hydrogen are difficult to steer with electric fields because of the symmetrical way that charges are distributed within them. But now researchers at ETH Zurich have found a clever technique to get a grip on the molecules. Their findings are reported in Physical Review Letters and highlighted in the September 14 issue of Physics.

14 Sep 2009

TSMC Adopts Synopsys' HSIM Simulator for Sub-40-Nanometer Memory IP Characterization Flow

Synopsys, Inc. (NASDAQ: SNPS), a world leader in software and IP for semiconductor design, verification and manufacturing, today announced that TSMC has adopted Synopsys' HSIM® hierarchical FastSPICE circuit simu...

From TSMC Taiwan Semiconductor Manufacturing Company 14 Sep 2009

Carl Zeiss Introduces Next Generation AIMS Mask Qualification System

At the Photomask Technology Conference 2009 in Monterey/CA Carl Zeiss introduces the next generation of their actinic AIMS™ mask qualification system. AIMS™ 32-193i emulates the imaging of photomasks with leading-edge 193nm immersion scanners for the 32nm node and beyond. The first delivery to a leading edge customer is scheduled for September 2009.

From Carl Zeiss Microscopy GmbH 14 Sep 2009

Europe's Leading Nanoelectronics Research Center Announces Bilateral Cooperation with Kaneka Corporation

IMEC, Europe's leading nanoelectronics research center, and Kaneka Corporation, the Japanese leading manufacturer of chemical specialties and solar cells, have announced a bilateral cooperation. Under the agreement, Kaneka will incorporate its European Photovoltaics Laboratory at IMEC in Leuven, Belgium.

From IMEC 14 Sep 2009

Strain on Nanowires Could Yield Colossal Results

In finally answering an elusive scientific question, researchers with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) have shown that the selective placement of strain can alter the electronic phase and its spatial arrangement in correlated electron materials.

From Lawrence Berkeley National Laboratory 13 Sep 2009

SEMATECH to Host 2009 SEMATECH/ISMI Symposia

SEMATECH and its subsidiary, the International SEMATECH Manufacturing Initiative (ISMI), will host their annual 2009 SEMATECH/ISMI Symposia in Hsin-chu, Taiwan, on 15 September, and in Tokyo, Japan, on 17 September. &...

11 Sep 2009