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ISMI, Oxford Instruments Join for Coating 450 mm Silicon Wafers with PECVD SiO2 Films

In collaboration with ISMI, the technology and applications teams at Oxford Instruments Plasma Technology have coated 450mm silicon wafers with PECVD SiO2 – a world first. The wafers were processed using the recen...

From Oxford Instruments Plasma Technology 6 Jan 2011

Georgia Tech Professor Receives IEEE Fellow Status for Contribution in MEMS Technologies

Six Georgia Institute of Technology faculty members have been elevated to Fellow status by the Institute of Electrical and Electronics Engineers (IEEE), the world’s leading professional association for the advancement of technology.

From Georgia Institute of Technology 5 Jan 2011

A*STAR Uses Nanoimprint Technology to Create Anti-Microbial Surfaces

Taking a leaf from animals like dolphins and pilot whales that are known to have anti-fouling skins, researchers from A*STAR's Industrial Consortium On Nanoimprint (ICON) are using nanotechnology to create synthetic, chemical-free, anti-bacterial surfaces.

29 Dec 2010

MIT Research Shows Complex Nano-Scale Texture Improves Hydrophobic Qualities in Airplanes

The buildup of ice on surfaces can cause problems in many situations: On airplane wings or on their engine turbine blades, ice can both add weight and interfere with a wing’s lift, which can make it impossible to take off; on high-voltage electrical lines, the weight of ice can cause lines to snap, causing blackouts and endangering people nearby; and on structures such as oil-drilling rigs, it can make even basic operations treacherous for people trying to work on slippery surfaces.

23 Dec 2010

Selective Area Growth of High-Quality InP Layers on 200mm Si(001) Wafers

Imec has demonstrated the selective area growth of high-quality InP layers on 200mm Si(001) wafers. Key to avoiding the typically formed and unwanted antiphase boundaries (APBs) is the creation of atomic steps on a thin Ge buffer layer. This result is a major step forward towards the fabrication of high-performance Ge/III-V CMOS devices and the integration of optoelectronic devices on a Si chip.

From IMEC 17 Dec 2010

New Technology to Fabricate Complex Three-Dimensional Microstructures

Researchers from imec and the University of Michigan have reported a new technology to fabricate complex three-dimensional microstructures, with intricate bends, twists, and multidirectional textures, starting from vertically aligned carbon nanotubes (CNT).

From IMEC 17 Dec 2010

Researchers Develop Artificial Fluidic Nanochannels of 2 nm Size

Artificial fluidic nanochannels that mimic the capabilities of transmembrane proteins are highly prized for a number of advanced technologies.

From Lawrence Berkeley National Laboratory 15 Dec 2010

Research Team Fabricates Photodetector Based on Single Nanowire

Moving a step closer toward quantum computing, a research team in the Netherlands recently fabricated a photodetector based on a single nanowire, in which the active element is a single quantum dot with a volume of a mere 7,000 cubic nanometers.

15 Dec 2010

Crossing Automation Brings Wafer-Level Automation to New, High Growth CNT Market

Extending its reach into related adjacent markets, Crossing Automation, Inc., a leading supplier of efficient, cost-effective automation solutions and engineering services, today announced a design win for its ExpressConnectTM vacuum wafer handling system by a carbon nanotube (CNT) original equipment manufacturer (OEM).

14 Dec 2010

AIXTRON Receives Order for Black Magic PECVD System from Graphenea SL

AIXTRON AG today announced a new order for a Black Magic Plasma Enhanced CVD (PECVD) system from Graphenea SL, a start-up company based within the facilities of nanoGUNE in San Sebastian city, in the Basque region of Spa...

From Graphenea 9 Dec 2010