Nanoelectronics News

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STMicroelectronics Commences Manufacture of STM32 F3 Microcontrollers and Launches Supporting Discovery Kit

STMicroelectronics is set to commence volume production for its novel project development platform that employs its new STM32 F3 high performance microcontroller family. The development platform, which is labeled the STM32 F3 Discovery Kit incorporates built-in features like an e-compass characterized by 9 degrees of freedom (DOF) and MEMS sensors-gyroscope.

From STMicroelectronics 13 Sep 2012

NTNU Scientists Patent and Commercialize GaAs Nanowires Grown on Graphene

The Norwegian University of Science and Technology (NTNU) researchers have patented GaAs nanowires grown on graphene, which is a hybrid material demonstrating competitive properties.

11 Sep 2012

Plastic Logic Presents Latest Advances in Organic Thin-Film Transistor Technology at ICFPE2012

At the 2012 International Conference on Flexible and Printed Electronics (ICFPE2012) in Tokyo, Japan, Plastic Logic, a key player in the plastics electronics field, will present its advanced flexible display technology for applications, including smart phones and e-readers.

10 Sep 2012

UCLA Researchers Receive Grant for Research on Electromagnetic Devices

UCLA's Henry Samueli School of Engineering and Applied Science has been granted over $35 million by the National Science Foundation's Engineering Research Center (ERC) program for carrying out a research focused on developing nano-electromagnetic devices that are as small as the size of a biological cell.

7 Sep 2012

Synopsys Announces 100th Successful DesignWare IP for 28-nm Processes

Synopsys announced its 100th successful DesignWare IP designed for 28-nm processes used in leading foundries. The complete 28-nm DesignWare IP line consists of PHYs for MIPI, DDR, HDMI, SATA, PCI Express, USB, and also logic libraries, embedded memories, audio codecs and data converters. In order to provide design robustness, the 28-nm DesignWare IP has been silicon-characterized in both PolySiON and High-K Metal Gate technologies across temperature, process and voltage variations.

From Synopsys, Inc. 7 Sep 2012

New Tenets of Nanoelectronics at Molecular Level

It is common knowledge to scientists dealing with electronic circuits that fundamental laws such as ohm’s law govern the properties of electronic circuits. Efforts have been extended for several years to determine if these laws hold good when electronic circuits are diminished to the size of a single molecule.

From Brookhaven National Laboratory 4 Sep 2012

Cree Announces Availability of 150-mm 4H n-Type Silicon Carbide Epitaxial Wafers

Cree, a provider of light-emitting diode (LED) lighting, lighting-class LEDs, and semiconductor products for RF and power applications, has introduced superior-quality, low micropipe 150-mm 4H n-type silicon carbide epitaxial wafers.

From Wolfspeed, Inc. 1 Sep 2012

Kansas State University Physicists Receives Prestigious Award from US Department of Energy

Matthias Kling, an assistant professor of physics at the Kansas State University has received the prestigious Early Career Research Program Award from the United States Department of Energy for his research project titled "Electron Dynamics in Nanostructures in Strong Laser Fields."

31 Aug 2012

Magnetic Vortex Aids in Measurement of Key Parameter of Electron Spin

Digital electronics has followed the path of miniaturization coupled with increasing processor speeds during its evolution through generations of technology. However, further miniaturization faces limitations owing to the functional limitations of existing data storage technology which renders stored magnetic information unstable if packed too dense.

From Brookhaven National Laboratory 30 Aug 2012

Veeco Installs GEN2000 Molecular Beam Epitaxy System at IPG

Veeco Instruments, a provider of advanced thin film process technologies including MOCVD, Ion Beam, and Molecular Beam Epitaxy (MBE) for manufacturers of power electronics, wireless chips, MEMS, hard drives, and LEDs, has announced that it has installed a GEN2000 Edge MBE System at IPG Photonics.

From Veeco 29 Aug 2012

Nanoelectronics News

STMicroelectronics Commences Manufacture of STM32 F3 Microcontrollers and Launches Supporting Discovery Kit

NTNU Scientists Patent and Commercialize GaAs Nanowires Grown on Graphene

Plastic Logic Presents Latest Advances in Organic Thin-Film Transistor Technology at ICFPE2012

UCLA Researchers Receive Grant for Research on Electromagnetic Devices

Synopsys Announces 100th Successful DesignWare IP for 28-nm Processes

New Tenets of Nanoelectronics at Molecular Level

Cree Announces Availability of 150-mm 4H n-Type Silicon Carbide Epitaxial Wafers

Kansas State University Physicists Receives Prestigious Award from US Department of Energy

Magnetic Vortex Aids in Measurement of Key Parameter of Electron Spin

Veeco Installs GEN2000 Molecular Beam Epitaxy System at IPG

Combining Nanofluids and Turbulators for Sustainable Energy

Enhancing Material Properties through Nanotube Encapsulation

Brain-Inspired Nano-Tech Promises New Era for Electronics

Breakthrough in 2D Material Growth Opens Doors to Cleaner Energy and Next-Generation Technology

Nanopore-Based Sensor Enables Rapid and Precise Disease Diagnosis

Conversations on AFM: Applications of BioAFM in Life Science

Conversations on AFM: The Technology and History Behind AFM and SPM

Recent Advances in High-Speed Atomic Force Microscopy to Improve Research Into Protein Dynamics

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Characterization of Active Pharmaceutical Ingredients, Injectables, and Proteins

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The Evolution of Lipid Nanoparticles

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