Nanoelectronics News

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Everspin, GLOBALFOUNDRIES Collaborate to Build Fully Processed 300mm Wafers with MTJ ST-MRAM Technology

Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that the company has partnered with GLOBALFOUNDRIES to build fully processed 300mm wafers with Everspin’s magnetic tunnel junction (MTJ) Spin-Torque Magnetoresistive Random-Access Memory (ST-MRAM) technology, starting with GLOBALFOUNDRIES 40 nanometer and 28 nanometer Low Power CMOS platforms.

28 Oct 2014

Maxscend Bluetooth RF IP Silicon Proven on SMIC's 55nm Low Leakage Logic Process

Semiconductor Manufacturing International Corporation ("SMIC") and Maxscend Technologies Inc., a RF IP company based in China, announced that Maxscend Bluetooth RF IP has been silicon proven on SMIC's 55nm Low Leakage (LL) logic process. This IP has now been integrated into one of SMIC customers' product tape-out.

From Semiconductor Manufacturing International Corporation (SMIC) 27 Oct 2014

Telecom Engineer Designs New Devices Based on Metamaterials

Víctor Torres Landivar, Telecommunications engineer, has designed and manufactured new devices based on metamaterials (artificial materials with properties not found in nature). On drawing up his PhD, defended at the Public University of Navarre (UPNA), he achieved the first experimental demonstration ever with epsilon-near-zero (ENZ) metamaterials.

25 Oct 2014

Aehr Test Systems to Debut FOX-1P Single Wafer Test System at 2014 ITC

Aehr Test Systems, a worldwide supplier of semiconductor test and burn-in equipment, today announced that it is introducing the FOX-1P system, its next generation single wafer test system for high volume production and early failure rate (EFR) test, at the 2014 International Test Conference (ITC) taking place October 21-23 in Seattle, Washington at the Washington State Convention Center (Booth #515).

21 Oct 2014

Cadence Helps GUC Complete First Production Design on TSMC’s 16nm FinFET Plus Process

Cadence Design Systems, Inc., a leader in global electronic design innovation, and Global Unichip Corporation (GUC), the Flexible ASIC LeaderTM, today announced that GUC used the Cadence® Encounter® Digital Implementation System to tape out its first production high performance computation ASIC design on TSMC’s 16nm FinFET Plus (16FF+) process.

From Cadence Design Systems 21 Oct 2014

Samsung Electronics Mass Produces 20nm 8Gb DDR4 DRAM

Samsung Electronics Co., Ltd., the world leader in memory technology, today announced that it is mass producing the industry’s most advanced 8-gigabit (Gb) DDR4 memory and 32-gigabyte (GB) module, both of which will be manufactured based on a new 20-nanometer (nm) process technology, for use in enterprise servers.

From Samsung Electronics 21 Oct 2014

Synopsys Debuts DesignWare STAR Memory System for Embedded Flash Product

Synopsys, Inc., a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today introduced the DesignWare® STAR Memory System® for Embedded Flash product, the industry's first integrated memory test and repair solution with test algorithms optimized for on-chip embedded flash memories.

From Synopsys, Inc. 21 Oct 2014

IBM's Microelectronics Business to be Acquired by GLOBALFOUNDRIES

IBM and GLOBALFOUNDRIES today announced that they have signed a Definitive Agreement under which GLOBALFOUNDRIES plans to acquire IBM's global commercial semiconductor technology business, including intellectual property, world-class technologists and technologies related to IBM Microelectronics, subject to completion of applicable regulatory reviews. GLOBALFOUNDRIES will also become IBM's exclusive server processor semiconductor technology provider for 22 nanometer (nm), 14nm and 10nm semiconductors for the next 10 years.

From GlobalFoundries 20 Oct 2014

Glasgow Nanofabrication Expert Honored with Institute of Physics President’s Medal

Professor Douglas Paul received the Institute of Physics President’s Medal at an event in London today (Wednesday 15 October).

17 Oct 2014

TSMC Honors Cadence with Partner of the Year Awards for Soft IP and 16nm FinFET Plus Solutions

Cadence Design Systems, Inc., a leader in global electronic design innovation, today announced that it has won two TSMC Partner of the Year awards during the TSMC Open Innovation Platform® (OIP) Ecosystem Forum. Cadence was presented with awards for both Soft IP and joint development of 16nm FinFET Plus (16FF+) design infrastructure.

From Cadence Design Systems 10 Oct 2014

Nanoelectronics News

Everspin, GLOBALFOUNDRIES Collaborate to Build Fully Processed 300mm Wafers with MTJ ST-MRAM Technology

Maxscend Bluetooth RF IP Silicon Proven on SMIC's 55nm Low Leakage Logic Process

Telecom Engineer Designs New Devices Based on Metamaterials

Aehr Test Systems to Debut FOX-1P Single Wafer Test System at 2014 ITC

Cadence Helps GUC Complete First Production Design on TSMC’s 16nm FinFET Plus Process

Samsung Electronics Mass Produces 20nm 8Gb DDR4 DRAM

Synopsys Debuts DesignWare STAR Memory System for Embedded Flash Product

IBM's Microelectronics Business to be Acquired by GLOBALFOUNDRIES

Glasgow Nanofabrication Expert Honored with Institute of Physics President’s Medal

TSMC Honors Cadence with Partner of the Year Awards for Soft IP and 16nm FinFET Plus Solutions

Nanopore-Based Sensor Enables Rapid and Precise Disease Diagnosis

Combining Nanofluids and Turbulators for Sustainable Energy

Multiscale Force Sensing with Photon-Avalanching Nanocrystals

Breakthrough in 2D Material Growth Opens Doors to Cleaner Energy and Next-Generation Technology

Enhancing Material Properties through Nanotube Encapsulation

Conversations on AFM: Applications of BioAFM in Life Science

Conversations on AFM: The Technology and History Behind AFM and SPM

Recent Advances in High-Speed Atomic Force Microscopy to Improve Research Into Protein Dynamics

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