NSCore’s OTP Non-Volatile Memory Qualifies for TSMC 0.18 µm and 65nm Processes

NSCore, a provider of advanced non-volatile memory (NVM) technologies for system-on-chip (SoC) semiconductors, has declared that its PermSRAM embedded one-time program (OTP) NVM technology has qualified for both TSMC 0.18 µm generic (G) and 65 nm low power (LP) processes adhering to the TSMC9000 standards.

Many clients have already begun mass production at 0.18 µm G technology. The mass production at 65 nm LP will be started by previous clients in December 2011. TSMC’s Intellectual Property Alliance Program Manager, Richard Lee stated that the TSMC9000 certification enables NSCore to prove the feasibility of its OTP technology for its customers developing on TSMC 0.18 µm G and 65 nm LP technologies.

The Chief Technology Officer at GainSpan, a provider of Wi-Fi semiconductor solutions, Lew Adams stated that the TSMC9000 qualification of NSCore's PermSRAM ensures that NSCore's OTP NVM is a trusted and reliable solution. NSCore’s macro, which is being installed at its TSMC65 LP design, offers effective area utilization, allowing the company to save production costs throughout the operating life of the product, he said.

Tada Horiuchi, who serves as the President and Chief Executive Officer at NSCore, stated that the company is happy that its OTP IP has qualified for TSMC technologies. PermSRAM OTP offers strong testability and compact macro area, which reduce production costs and improve yield, he said. With the TSMC9000 certification, the company can now offer robust OTP solutions to its customers, he concluded.

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