Apr 13 2009
ON Semiconductor (Nasdaq: ONNN), a leading global supplier of high performance, energy efficient, silicon solutions, today announced the further expansion of its application specific integrated circuit (ASIC) offering through an agreement with LSI Corporation (NYSE: LSI). The agreement gives ON Semiconductor customers access to an established and cost-effective 110 nanometer (nm) process technology and associated silicon-proven intellectual property (IP) via ON Semiconductor's wafer fabrication facility in Gresham, Oregon.
The 110 nm ‘System Platform’ (SP110), offers customers a high-density, high-performance technology, while minimizing non-recurring engineering (NRE) costs and reducing time-to-market when compared to like technologies. A maximum operating frequency of 450 megahertz (MHz) and a comprehensive IP portfolio allows SP110 to address many performance and functionality requirements without the development costs and process overhead associated with technologies at or below 90 nm. In addition, SP110 delivers better performance and lower power consumption than some mainstream 130 nm technologies.
The combination of process benefits, comprehensive IP options and technical support meets the needs of customers in the communications, consumer, industrial and medical sectors. SP110 solutions are also an ideal match for military and aerospace applications - leveraging U.S.-based design interface and fabrication with end-to-end conformance to International Traffic in Arms Regulation (ITAR) requirements. Military/Aerospace-specific quality standards such as QML and AS9100 are also planned for SP110.
“The investment we are making in SP110 demonstrates our ongoing commitment to the ASIC business,” said Keith Jackson, ON Semiconductor president and CEO. “We also plan to utilize this technology for future application specific standard products (ASSPs) and standard product platforms requiring higher digital content and performance while minimizing power consumption.”
Under the terms of the LSI agreement, ON Semiconductor will offer an extensive suite of IP, including a SerDes solution supporting PCI Express, Gigabit Ethernet, and XAUI interface standards. SP110 customers will also be able to take advantage of other silicon-proven, synthesizable IP from the ON Semiconductor portfolio including blocks for USB 2.0, Ethernet MAC, microcontrollers, timing generators and DDR 1/2/3 memory controllers.
SP110 utilizes low-K copper (Cu) interconnect technology providing up to nine metal layers, including two redistribution layers (RDLs). The technology supports core voltages of 1.2 volts (V) and I/O voltages of 1.8 V, 2.5 V, 3.3 V and 5.0 V. ON Semiconductor offers both a netlist and RTL handoff methodology for SP110, ensuring optimum flexibility for designers.
“This exciting new platform enables us to deliver an unprecedented mix of unique process-related advantages, such as on-shore production and 110 nm ASIC performance, along with breadth of IP,” said Bob Klosterboer, ON Semiconductor senior vice president of digital and mixed-signal products. “SP110 allows ON Semiconductor to better serve our existing customer base and to expand into new segments of the custom IC marketplace.”
“We’re very pleased to work with ON Semiconductor to expand the availability of our robust, silicon-proven 110 nm process technology and IP," said Sudhakar Sabada, senior vice president and general manager, Custom Solutions Division, LSI. "Through the combination, ON Semiconductor is able to offer their customers an attractive design platform that can serve a broad range of applications.”
For additional information about ASIC solutions from ON Semiconductor, please contact Vince Hopkin at [email protected] or visit www.onsemi.com.