Feb 16 2010
Molecular Imprints, Inc., the market and technology leader for nanopatterning systems and solutions, today announced that it is upgrading its Imprio® 250 nanopatterning system, installed at the Device Process Development Center of Toshiba's Corporate Research and Development Center, to an Imprio 300. Molecular Imprints' Imprio 300 system represents the highest resolution and lowest cost-of-ownership (CoO) patterning solution for IC prototyping and process development. Built upon the Imprio 250 architecture, the Imprio 300 delivers significantly improved throughput rates, overlay performance and automation capabilities. In addition, the ability of the Imprio 300 to create dense, high-resolution structures makes it especially well suited for advanced semiconductor applications.
"Molecular Imprints is dedicated to realize the full potential of our Jet and Flash(TM) Imprint Lithography (J-FIL(TM)) technology for advanced semiconductor applications," stated Mark Melliar-Smith, CEO of Molecular Imprints. "The progress we are delivering in terms of tool resolution and cost of ownership performance is evidence that imprint lithography has emerged as one of the candidates for future production of semiconductor devices. In all of the key technical categories from overlay control to defectivity levels, our imprint lithography systems are meeting their benchmarks as we move to support volume production with cutting-edge technology."
With improved overlay performance, a mix-and-match strategy with existing 193-nm scanners has been demonstrated down to 20nm full field. Utilized in a mix-and-match strategy, J-FIL's resolution and cost advantages can be deployed on specific critical layers, while its use of commercially available photomasks, exposure sources and resists makes for straightforward integration with the industry's existing optical lithography infrastructure. Beyond being compatible with the existing lithography infrastructure, J-FIL technology offers the promise of extending lithography to 10nm and beyond.