Dec 5 2007
Oxford Instruments, the high-technology tools and systems company, is pleased to release its latest upgrade for dry etch de-processing in semiconductor failure analysis (FA), the Plasma Accelerator for advanced die processing.
The Plasma Accelerator delivers increased etching speeds, superior duplication rates, straightforward operation and low damage while supporting a full range of dry-etch FA processes including passivation removal and IMD (inter-metallic dielectric) and ILD (inter-layer dielectric) etch, ensuring a clean, smooth etched surface is produced with no metal de-lamination or erosion.
This flexible and economic upgrade also significantly enhances process throughput by delivering up to 20 times faster etch rates – increasing overall tool utilisation and decreasing process gas usage by 90% while ensuring a fast investigation of the suspected failure. Typical process times are reduced to less than 5 minutes to expose 4 metal layers – 8 times faster than conventional ICP (inductively coupled plasma) mode processes and 20 times faster than RIE (reactive ion etching).
Oxford Instruments offers a unique family of FA dry etch de-processing solutions. The Plasma Accelerator upgrade can be used with both new and existing Plasmalab µEtch300, Plasmalab µEtch200 and Plasmalab µEtchICP systems. These flexible tools allow a range of processes from passivation removal to anisotropic oxide removal, from small die or packaged device through to full 300 mm wafer. Oxford Instruments continues to add to its failure analysis product line, with the recent launch of the Plasmalab µEtchEL, a flexible and economic entry-level tool with switchable dual-mode PE/RIE (plasma etch/reactive ion etch) capability.