IMEC technologists will present their newest breakthroughs in advanced semiconductor lithography research and development at next week's SPIE Advanced Microlithography Conference, to be held February 23 - 27 in San Jose, California.
IMEC will present a record 26 papers at the conference. The papers report progress realized by IMEC and its world-leading core partners on EUV and double patterning lithography targeting the sub-32nm node. The range of lithography challenges are covered, including materials, manufacturing process technology, metrology, inspection, process control, optical microlithography, design for manufacturing, and alternative lithographic processes.
“Stimulated by these record number of papers and with a concerted effort from all actors involved in double patterning and EUV lithography research, IMEC is determined to advance cost-effective double patterning towards the 32nm node and EUV full speed towards the (sub-)22nm node”, stated Kurt Ronse, Advanced Lithography Program Director of IMEC. “SPIE provides the prestigious forum for the industry’s technologists to share findings and move semiconductor manufacturing forward to accomplish this common service.
Kurt Ronse continued, “As technologists, our goal is to enable engineers and scientists to see their IC designs become reality through manufacturing. Through IMEC’s collaborative research, we have achieved many milestones to discuss with our international colleagues.”