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Researchers Develop New Methods to Fabricate Thin Films of Nanoparticles

Two techniques for fabricating gold monolayers, which are thin films of nanoparticles, have been devised by scientists at the Institute of Physical Chemistry of the Polish Academy (IPC PAS) in Warsaw. One technique is based on self-assembly, whereas the other utilizes the properties of salt solutions that are highly concentrated. Both these techniques assist in developing consistent, positively charged monolayers.

13 Feb 2012

Kilopass’ NVM IP Completes Reliability Testing on TowerJazz 130 nm CMOS Process

Kilopass Technology has announced that its XPM embedded one-time programmable anti-fuse non-volatile memory (NVM) intellectual property (IP) has successfully qualified the reliability testing as per the JEDEC 47 specification for the TowerJazz 130 nm G CMOS process.

9 Feb 2012

Hitachi GST’s Ultrastar SSD400S.B Family Uses 25 nm SLC NAND Flash

Hitachi Global Storage Technologies (Hitachi GST) has declared that its Ultrastar enterprise-class solid state drive (SSD) portfolio has become the first in the industry to use 25 nm single-level cell (SLC) NAND flash.

9 Feb 2012

Annual Forum on FD-SOI Technology for Advanced Semiconductor Architectures

The SOI Industry Consortium, Soitec and CEA-Leti have jointly organized the sixth annual workshop on fully depleted silicon-on-insulator (FD-SOI) technology for sophisticated semiconductor architectures.

8 Feb 2012

Cadence, Samsung Foundry Collaborate to Develop DFM Infrastructure for Advanced Nanometer Chip Designs

Cadence, a global innovator of electronic design products, and Samsung Foundry, the foundry business of Samsung Electronics, have collaborated to develop design-for-manufacturing (DFM) infrastructure for production of advanced chips.

From Cadence Design Systems 8 Feb 2012

Epistar to Use Veeco’s MOCVD Tool for GaN-on-Si LED Development

Veeco Instruments, a manufacturer of process equipment for developing and producing hard disk drives, solar cells, LEDs and other devices, has announced the selection of its gallium nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System called TurboDisc K465i by Epistar for growing light emitting diodes (LEDs) on silicon substrates.

From Veeco 8 Feb 2012

Rudolph’s Metrology System Offers Non-Destructive Measurements on Product Wafers

Rudolph Technologies has entered into a new market for metrology by delivering its first MetaPULSE metrology system for measuring redistribution layers (RDL) and under bump metallization (UBM) utilized in sophisticated back-end packaging technologies of the integrated circuit (IC) production process.

From Onto Innovation 8 Feb 2012

LG Siltron to Use Veeco’s MOCVD System for Producing GaN-on-Si Wafers

LG Siltron, an epi wafer manufacturer based in South Korea, has chosen Veeco Instruments’ gallium nitride metal organic chemical vapor deposition (MOCVD) system called TurboDisc K465i for manufacturing gallium nitride on silicon (GaN-on-Si) wafers for use in LED devices and power electronics.

From Veeco 8 Feb 2012

Researchers Develop New Technique to Obtain Nanorod Arrays

Researchers at the Lawrence Berkeley National Laboratory (Berkeley Lab) of the U.S. Department of Energy (DOE) have developed a fast and easy method to induce nanorods to self-assemble into 1-, 2- and 3-D macroscopic structures.

From Lawrence Berkeley National Laboratory 4 Feb 2012

Center for Nanoscale Science and Engineering Develops Antennaless RFID Tags

Scientists from the North Dakota State University’s Center for Nanoscale Science and Engineering (CNSE) have developed an antennaless radio frequency identification (RFID) tag, which paves the way to track a variety of products that are difficult to be tracked by most of the current RFID systems.

4 Feb 2012