Nanoelectronics News

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CEA-Leti Announces Feasibility of CoolCube in FinFET Technology on 300mm Production Line

CEA-Leti today announced its first results towards the demonstration of CoolCube’s feasibility in FinFET technology on its 300mm production line, and new CoolCubeTM circuit designs that improve the trade off between area, speed and power.

From CEA-Leti 14 Jul 2015

Applied Materials Introduces Centris Sym3 Etch System with New Chamber for Atomic-Level Precision Manufacturing

Applied Materials, Inc. today announced a next-generation etch tool, the Applied Centris(TM) Sym3(TM) Etch system, featuring an entirely new chamber for atomic-level precision manufacturing. To overcome within-chip feature variations, the Centris Sym3 system leapfrogs current tools to provide chipmakers with the control and precision needed to pattern and create densely packed 3D structures in advanced memory and logic chips.

From Applied Materials Inc. 14 Jul 2015

GLOBALFOUNDRIES Debuts 22nm 2D FD-SOI Technology for Ultra-Low-Power Requirements

GLOBALFOUNDRIES today launched a new semiconductor technology developed specifically to meet the ultra-low-power requirements of the next generation of connected devices. The “22FDX™” platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies, providing an optimal solution for the rapidly evolving mainstream mobile, Internet-of-Things (IoT), RF connectivity and networking markets.

From GlobalFoundries 14 Jul 2015

Applied Materials Debuts High-Performance ALD System for 3D Memory and Logic Chips Manufacturing

Applied Materials, Inc. today unveiled the Applied Olympia(TM) ALD system featuring a unique, modular architecture that delivers high-performance ALD technology to manufacturers of leading-edge 3D memory and logic chips. The 3D device inflection is driving growth in ALD with demand for new patterning films, new conformal materials and lower thermal budgets.

From Applied Materials Inc. 14 Jul 2015

STMicroelectronics and French Institute of Materials, Microelectronics and Nanosciences Launch Joint Research Laboratory

Building on many years of close collaboration and numerous joint research programs, STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, and the French Institute of Materials, Microelectronics and Nanosciences in Provence (IM2NP - CNRS / Aix-Marseille University / University of Toulon / ISEN engineering school), member of the Carnot STAR (Science and Technology for Research Applications) Institute, have announced the official launch of a new joint research laboratory to develop the next generations of high-reliability, ultra-miniaturized electronic components.

From STMicroelectronics 10 Jul 2015

MIT Researchers Use Yarns of Niobium Nanowire to Boost Performance of Small Electronic Devices

A team of researchers from MIT and University of British Columbia has discovered an innovative method to deliver short bursts of high power required by wearable electronic devices.

From Massachusetts Institute of Technology 7 Jul 2015

Peregrine Launches RF SOI Built on GLOBALFOUNDRIES' 130nm 300mm RF Technology Platform

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS?11 platform, the industry's first RF SOI technology built on GLOBALFOUNDRIES' 130 nm 300 mm RF technology platform.

7 Jul 2015

Toshiba Develops 130nm-NVM and 65nm-Flash Memory Processes for Microcontrollers

Toshiba Corporation today announced that it has developed a flash memory embedded process based on 65nm logic process that uses less power than current mainstream technology, and a single-poly non-volatile memory (NVM) process based on 130nm logic and analog power process. Applying the optimal process to diverse applications will allow Toshiba to expand its product line-up in such areas as microcontrollers, wireless communication ICs, motor controller drivers and power supply ICs.

6 Jul 2015

PSI Researchers Successfully Create 7nm-Wide Parallel Lines in a Semiconductor Material

Researchers reveal how particularly fine structures can be produced in semiconductors for computer chips of the future

6 Jul 2015

Polymer Mold Forms Perfect 3D-Structured Single-Crystal Nanostructures

Polymer engineers from Cornell University have created a novel mold for nanostructures which is capable of forming liquid silicon from organic polymer materials.

6 Jul 2015

Nanoelectronics News

CEA-Leti Announces Feasibility of CoolCube in FinFET Technology on 300mm Production Line

Applied Materials Introduces Centris Sym3 Etch System with New Chamber for Atomic-Level Precision Manufacturing

GLOBALFOUNDRIES Debuts 22nm 2D FD-SOI Technology for Ultra-Low-Power Requirements

Applied Materials Debuts High-Performance ALD System for 3D Memory and Logic Chips Manufacturing

STMicroelectronics and French Institute of Materials, Microelectronics and Nanosciences Launch Joint Research Laboratory

MIT Researchers Use Yarns of Niobium Nanowire to Boost Performance of Small Electronic Devices

Peregrine Launches RF SOI Built on GLOBALFOUNDRIES' 130nm 300mm RF Technology Platform

Toshiba Develops 130nm-NVM and 65nm-Flash Memory Processes for Microcontrollers

PSI Researchers Successfully Create 7nm-Wide Parallel Lines in a Semiconductor Material

Polymer Mold Forms Perfect 3D-Structured Single-Crystal Nanostructures

Biochar-Modified Titanium Dioxide Nanocomposites for Enhanced Water Treatment

New Nanocage Material Removes Up to 90% of Toxic PFAS from Water

Enhancing Chitosan Films with Silanized Hexagonal Boron Nitride for Sustainable Applications

Gold Nanoparticles to Restore Vision in Retinal Disorders

Study Shows Potential for New Treatments for Neurological and Inflammatory Diseases

Overcoming Nanogold Production Challenges

Electrospinning and the Future of Nanotechnology

How Electrospinning is Shaping the Future of Nanotechnology

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