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UBM Honors SanDisk, Toshiba for 32nm NAND Flash Device

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Jul 30 2010

UBM TechInsights has announced SanDisk/Toshiba as the winner of the Most Innovative Non-Volatile Memory (NVM) award in TechInsights' 9th Annual Insight Awards. The SanDisk/Toshiba 32nm 32Gbit x3 (3 bit per cell) NAND Flash was analyzed by UBM TechInsights.

The winning NVM die was found in a SanDisk 32GB Micro SDHC memory card. The SanDisk/Toshiba part was chosen due to overall system-level optimization in the face of stiff competition from more aggressive processes (25nm) and architectures (4-bit per cell). UBM TechInsights analysts felt that the combination of 3-bit per cell architecture and a slightly conservative process (32nm) gave the edge to SanDisk/Toshiba in this category. The device marks a significant milestone where higher bit per cell architectures are considered reliable enough for high-volume, mass-production products.

Other leading-edge NAND Flash devices considered for the 9th Annual Insight Awards include:

-- Intel/Micron (IMFT) 25nm 64Gbit MLC NAND Flash
-- Hynix 32nm 32Gbit MLC NAND Flash
-- IMFT 34nm 32Gb 3-bit-per-cell NAND Flash
-- Samsung 35nm 32Gbit MLC NAND Flash
-- SanDisk 43nm 64Gbit x4 NAND

Source: http://www.ubmtechinsights.com/

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