At Thermic Edge, we’re proud to introduce our new Atomic Layer Deposition (ALD) System, designed to accelerate the integration of 2D materials into next-generation semiconductor devices, including high-mobility transistors, memory, and optoelectronics.
Image Credit: Thermic Edge Ltd
Our ALD System combines single-chamber ALD and high-temperature annealing, reducing contamination risks while improving process efficiency. It supports wafer-scale processing up to 8 inches, ensuring uniform deposition across large-area substrates. With superior step coverage, it achieves monolayer precision on high-aspect-ratio structures, and the low-temperature process ensures compatibility with advanced materials.
Key features include a showerhead gas delivery system for uniform gas distribution, SiC3-coated graphite sample holders and heating elements that allow precise temperature control. High-temperature annealing up to 1250 °C promotes crystallinity and phase transformation, while multi-gas compatibility enables oxide, sulfide, and nitride processing in tightly controlled environments. Supported gases include H2S, H2Se, O2, O3, N2, and Ar.
This system reflects our ongoing commitment to providing innovative, high-performance vacuum technologies for the semiconductor industry.