Jul 17 2010
Vishay Intertechnology, Inc. (NYSE: VSH) has broadened its optoelectronics portfolio with the introduction of the new AEC-Q101-qualified VEMD25x0X01 high-speed silicon PIN photodiodes and VEMT25x0X01 NPN planar phototransistors.
Available in 1.8-mm gullwing and reverse gullwing surface-mount packages, the photo detectors are sensitive to visible and near-infrared radiation and offer a compact footprint of 2.3 mm by 2.3 mm by 2.8 mm.
The devices released today are optimized for light curtains, miniature switches, encoders, and photo-interrupters in metering, automotive, and printer applications; and detectors for visible and infrared emitter sources in proximity applications.
The photodiodes offer a 12-microamp light current and spectral sensitivity range of 350 nm to 1120 nm, while the phototransistors offer a light current of 6 mA and spectral sensitivity range of 470 nm to 1090 nm. The VEMD25x0X01 and VEMT25x0X01 devices feature a 1-nA dark current, 15-degree angle of half sensitivity, and temperature range of - 40 to + 100 deg. C., and have a matching IR emitter in the high-intensity, high-speed VSMB20x0X01.
While most photo detectors only feature a moisture sensitivity level (MSL) of 3 and must be mounted within 72 hours of being unsealed or removed from protective packing, the VEMD25x0X01 and VEMT25x0X01 devices can remain on the plant floor for up to four weeks, thanks to their MSL of 2a, per J-STD-020. The photo detectors support lead (Pb)-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, are halogen- free according to the IEC 61249-2-21 definition, and are compatible with lead (Pb)-free reflow solder assembly.
Samples and production quantities of the new photodiodes and phototransistors are available now, with lead times of four to six weeks for larger orders.
Source: http://www.vishay.com/